Highly-uniform large-area MOVPE growth of InGaAsP by controlled stagnation point flow
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 231-235
- https://doi.org/10.1016/0022-0248(91)90744-p
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Layer uniformity in a multiwafer MOVPE reactor for III–V compoundsJournal of Crystal Growth, 1991
- A new versatile, large size MOVPE reactorJournal of Crystal Growth, 1988
- The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindiumJournal of Electronic Materials, 1986
- CVD in Stagnation Point Flow: An Evaluation of the Classical 1D TreatmentJournal of the Electrochemical Society, 1986