Mechanism of hydrogen sensing in Pd-Si metal-insulator-semiconductor diodes
- 1 September 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (5) , 2044-2050
- https://doi.org/10.1063/1.336013
Abstract
Capacitance, conductance, and photoinduced current measurements have been made on Pd-Si metal-insulator-semiconductor diodes to define the mechanism by which these devices sense hydrogen. The results have been used to construct a model which is capable of describing the major features of the response of these diodes to hydrogen. The current flow is found to be majority carrier dominated, through interface states at the SiO2-Si interface. Changes in current under reverse bias upon exposure to hydrogen result from lowering of both the Schottky barrier and the oxide barrier height but not from changes in the interface density of states.This publication has 11 references indexed in Scilit:
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