(SN)x-GaAs polymer-semiconductor solar cells
- 1 November 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (9) , 812-814
- https://doi.org/10.1063/1.90537
Abstract
We report the first solar cell whose junction is formed by a polymer‐semiconductor interface. Open‐circuit voltages, Voc≳0.7 V, have been observed on cells consisting of a thin film of polymeric sulfur‐nitride, (SN)x, deposited on GaAs. This is an enhancement of more than 40% over the Voc commonly measured with metal‐GaAs solar cells. Initial efforts have resulted in efficiencies ≳6% without antireflection coatings.Keywords
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