Low temperature photoluminescence spectroscopy of thin film, polycrystalline CdTe/CdS solar cell structures
- 21 September 2000
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 15 (10) , 975-979
- https://doi.org/10.1088/0268-1242/15/10/308
Abstract
As-grown n-CdTe/n-CdS solar cell structures deposited on tin oxide-coated glass have been studied using low temperature photoluminescence spectroscopy. The structures were annealed in air at temperatures up to 600 °C. For anneal temperatures of 400-450 °C, and above, acceptor related transitions at around 1.45, 1.51 and 1.56 eV are tentatively ascribed to copper, oxygen and VCd-related centres, respectively. Illuminated current-voltage measurements have shown that these findings are consistent with considerable improvements in short circuit current density that are believed to be associated with n- to p-type conversion of the CdTe film.Keywords
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