Photoluminescence and p-type conductivity in CdTe:N grown by molecular beam epitaxy
- 1 November 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (9) , 5423-5428
- https://doi.org/10.1063/1.357197
Abstract
An rf nitrogen (N) plasma source has been used to achieve p‐type conductivity in molecular beam epitaxy CdTe layers grown with a Cd overpressure. Photoluminescence and secondary ion mass spectrometry measurements have confirmed the incorporation of the N species, and evidence for the resulting p‐type conductivity has been obtained using capacitance‐voltage and current‐voltage techniques. Net hole concentrations as high as 2×1017 cm−3 have so far been achieved, which contrasts with the normally n‐type nature of our undoped CdTe layers.This publication has 16 references indexed in Scilit:
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