Mechanism for hydrogen diffusion in amorphous silicon
- 15 January 1998
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (4) , 2253-2256
- https://doi.org/10.1103/physrevb.57.2253
Abstract
Tight-binding molecular-dynamics calculations reveal a mechanism for hydrogen diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicons and breaking their bonds. The diffusing hydrogen carries with it a newly created dangling bond. These intermediate transporting states are densely populated in the network, have lower energies than H at the center of stretched bonds, and can play a crucial role in hydrogen diffusion.
Keywords
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