Light-enhanced hydrogen motion ina-Si:H
- 4 November 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 67 (19) , 2686-2689
- https://doi.org/10.1103/physrevlett.67.2686
Abstract
We report the first direct observation of light-enhanced hydrogen motion in hydrogenated amorphous silicon. Diffusion enhancement increases with illumination intensity in undoped material and is suppressed in doped and in compensated material. The enhancement is attributed to an increased release rate of hydrogen from silicon-hydrogen bonds in the presence of photogenerated carriers. The implications of the effect for metastable defect formation are discussed.Keywords
This publication has 13 references indexed in Scilit:
- Defect equilibria in undopeda-Si:HPhysical Review B, 1989
- Hydrogen-mediated model for defect metastability in hydrogenated amorphous siliconPhysical Review B, 1989
- The connection between dispersive hydrogen motion and the kinetics of light-induced defects in hydrogenated amorphous siliconPhilosophical Magazine Letters, 1989
- Effusion of deuterium from deuterated-fluorinated amorphous silicon under illuminationApplied Physics Letters, 1988
- Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous siliconPhysical Review B, 1988
- Hydrogenated microvoids and light-induced degradation of amorphous-silicon solar cellsApplied Physics A, 1986
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- A SIMS analysis of deuterium diffusion in hydrogenated amorphous siliconApplied Physics Letters, 1978
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977