Precise control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells

This publication has 14 references indexed in Scilit:

• Microscopic excitation spectroscopy for zero-dimensional quantized states of individual ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As/${\mathrm{Al}}_{\mathit{y}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{y}}$As quantum dots
  Physical Review B, 1996
• In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)
  Applied Physics Letters, 1996
• Self-Organization in Growth of Quantum Dot Superlattices
  Physical Review Letters, 1996
• Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
  Physical Review Letters, 1995
• Clean GaP(001)-(4×2) and H2S-treated (1×2)S surface structures studied by scanning tunneling microscopy
  Applied Physics Letters, 1995
• Ultranarrow Luminescence Lines from Single Quantum Dots
  Physical Review Letters, 1995
• Strain-induced lateral band gap modulation in Si1−xGex/Si quantum well and quantum wire structures
  Journal of Crystal Growth, 1995
• Photoluminescence investigation on growth mode changeover in Ge-rich Si1−xGex/Si strained quantum wells
  Journal of Crystal Growth, 1995
• Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
  Applied Physics Letters, 1993
• Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
  Physical Review Letters, 1990