On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM‐EBIC (I). Fundamentals and contrast due to macroscopical inhomogeneities
- 1 January 1980
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 15 (2) , 185-192
- https://doi.org/10.1002/crat.19800150211
Abstract
The physical processes are explained for understanding of the EBIC‐method with direct irradiated schottky barriers, followed by description of preparation. The imagening of macroscopical inhomogeneities (striations, lifetime‐striae) is shown as an application in this Ist part. Finally contrasts are discussed, which are caused by preparation or by surface unevenness respectively, but not by inhomogeneities of the material.Keywords
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