Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using self-consistent oxide code
- 1 June 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 47 (3) , 620-626
- https://doi.org/10.1109/23.856489
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Oxide charge modeling with CEA-TRAPPOX code version 4. Comparison of trapping models on desktop computerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Total dose induced latch in short channel NMOS/SOI transistorsIEEE Transactions on Nuclear Science, 1998
- TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETsIEEE Transactions on Nuclear Science, 1998
- Charge trapping in SIMOX and UNIBOND® oxidesMicroelectronic Engineering, 1997
- Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxidesIEEE Transactions on Nuclear Science, 1995
- Hole transport in SiO/sub 2/ and reoxidized nitrided SiO/sub 2/ gate insulators at low temperature (FETs)IEEE Transactions on Nuclear Science, 1991
- High-field capture of electrons by Coulomb-attractive centers in silicon dioxideJournal of Applied Physics, 1976