Macroscopic migration of implanted deuterium along a gas-bubble network in silicon
- 15 September 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (6) , 3030-3035
- https://doi.org/10.1063/1.371164
Abstract
We observed experimentally the macroscopic migration of implanted deuterium in silicon with a new method in which the implanted deuterium concentrations were measured by counting the protons emitted from the nuclear reaction H2(d,p)H3 in the implanted region. The experimental results support a new model in which a macroscopic migration of gas bubbles containing the implanted deuterium in the form of D2 molecules exists in the implanted region and D2 molecules migrate macroscopically along the network. We describe the growth of the macroscopic network with percolation theory. From quantitative analysis of the experimental results, the density critical exponent β was obtained and found to be close to the theoretical value for two-dimensional systems predicted by the scaling theory of percolation.This publication has 8 references indexed in Scilit:
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