Photopumped antiguide blue lasers fabricated from molecular beam epitaxial ZnSe on GaAs
- 1 August 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (8) , 685-687
- https://doi.org/10.1109/68.84452
Abstract
Room temperature photopumped laser oscillation at 469 nm has been achieved in ZnSe thin film leaky waveguide (antiguide) resonators with threshold pump intensities of about 350 kW/cm/sup 2/. The 1 mu m thick ZnSe was grown by molecular beam epitaxy on aKeywords
This publication has 15 references indexed in Scilit:
- Room-temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice-matched (Ga,In)As substratesApplied Physics Letters, 1990
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990
- ZnSe light-emitting diodesApplied Physics Letters, 1990
- Distributed feedback coupling coefficient in diode lasers with metallized gratingsIEEE Photonics Technology Letters, 1990
- Current approaches to p n junctions in wider band gap II–VI semiconductorsJournal of Vacuum Science & Technology A, 1990
- Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasersIEEE Journal of Quantum Electronics, 1988
- Quantum confinement and strain effects in ZnSe-ZnSxSe1−x strained-layer superlatticesApplied Physics Letters, 1987
- First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. II. Optical propertiesPhysical Review B, 1981
- Simple expression for light output of edge-emitting d.h. l.e.d.sElectronics Letters, 1978
- Some Electrical and Optical Properties of ZnSeJournal of Applied Physics, 1961