Analytical models for the growth by metal organic vapour phase epitaxy: III. Applications
Open Access
- 1 April 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (4) , 291-298
- https://doi.org/10.1088/0268-1242/5/4/002
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Modeling of chemical vapor deposition reactorsJournal of Electronic Materials, 1988
- On the 2D modelling of horizontal CVD reactors and its limitationsJournal of Crystal Growth, 1988
- Three‐Dimensional Flow Effects in Silicon CVD in Horizontal ReactorsJournal of the Electrochemical Society, 1988
- Complex flow phenomena in vertical MOCVD reactors: Effects on deposition uniformity and interface abruptnessJournal of Crystal Growth, 1987
- On Three‐Dimensional Transport Phenomena in CVD ProcessesJournal of the Electrochemical Society, 1987
- Complex flow phenomena in MOCVD reactorsJournal of Crystal Growth, 1986
- Gas phase depletion and flow dynamics in horizontal MOCVD reactorsJournal of Crystal Growth, 1986
- A Mathematical Model of Silicon Chemical Vapor Deposition: Further Refinements and the Effects of Thermal DiffusionJournal of the Electrochemical Society, 1986
- A Mathematical Model of the Coupled Fluid Mechanics and Chemical Kinetics in a Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1984
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969