4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

This publication has 3 references indexed in Scilit:

• Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation
  Applied Physics Letters, 2002
• Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
  IEEE Electron Device Letters, 2001
• A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112̄0) face
  Applied Physics Letters, 2001