Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

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Abstract
This work presents improved channel mobility of n-channel metal–oxide–semiconductor field-effect transistors(MOSFETs) on 4H–SiC, achieved by gate-oxide nitridation in nitric oxide. Lateral enhancement mode MOSFETs were fabricated using standard polycrystallinesilicon gate process and 900 °C annealing for the source and drain contacts. The low field mobility of these MOSFETs was as high as 48 cm 2 / Vs together with a threshold voltage of 0.6 V, while the interface state density—determined from the subthreshold slope—was about 3×10 11 eV −1 cm −2 . The 43-nm-thick gate oxide of coprocessed metal–oxide–semiconductor structures exhibited a breakdown field strength of 9 MV/cm.