Range parameters of Er, Ga and F implanted into SiC films

This publication has 11 references indexed in Scilit:

• Range parameters study of Pb and Au implanted into SiC films
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
• Range parameters study of medium-heavy ions implanted into light substrates
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
• Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Algorithms for the rapid simulation of Rutherford backscattering spectra
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• Range profiles of implanted Bi and Au in amorphous silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• Evidence for an insulator—metal effect on the Z1 range oscillations in the nuclear stopping regime
  Physics Letters A, 1982
• Effective stopping-power charges of swift ions in condensed matter
  Physical Review B, 1982
• A Monte Carlo computer program for the transport of energetic ions in amorphous targets
  Nuclear Instruments and Methods, 1980
• Z1-oscillations in low-energy heavy-ion ranges
  Nuclear Instruments and Methods, 1980
• ⁴He-stopping power measurements by using ion implantation and backscattering techniques
  Radiation Effects, 1980