Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
- 15 October 2006
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 527-529, 547-550
- https://doi.org/10.4028/www.scientific.net/msf.527-529.547
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Divacancy Model for P6/P7 Centers in 4H- and 6H-SiCPublished by Test accounts ,2006
- SiC Bipolar Power DevicesMRS Bulletin, 2005
- Defects in High-Purity Semi-Insulating SiCMaterials Science Forum, 2004
- Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiCPhysica B: Condensed Matter, 2003
- Electrically active defects in n-type 4H–silicon carbide grown in a vertical hot-wall reactorJournal of Applied Physics, 2003
- Vanadium-free Semi-insulating 4H-SiC SubstratesMaterials Science Forum, 2000
- Observation of negative-U centers in 6H silicon carbideApplied Physics Letters, 1999
- Negative-Ucenters in 4Hsilicon carbidePhysical Review B, 1998
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974