SiC Bipolar Power Devices
- 1 April 2005
- journal article
- Published by Springer Nature in MRS Bulletin
- Vol. 30 (4) , 299-304
- https://doi.org/10.1557/mrs2005.77
Abstract
The successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.Keywords
This publication has 15 references indexed in Scilit:
- High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction TransistorsMaterials Science Forum, 2004
- 4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift LayerMaterials Science Forum, 2004
- Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiCMaterials Science Forum, 2003
- Demonstration of Monolithic Darlington Transistors in 4H-SiCMaterials Science Forum, 2003
- Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN DiodesMaterials Science Forum, 2002
- Structural Defects in Electrically Degraded 4H-SiC PiN DiodesMaterials Science Forum, 2002
- 1800 V NPN bipolar junction transistors in 4H-SiCIEEE Electron Device Letters, 2001
- Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiersIEEE Electron Device Letters, 2001
- Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiersSolid-State Electronics, 1998
- 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)IEEE Electron Device Letters, 1997