Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers
- 1 December 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (12) , 2157-2164
- https://doi.org/10.1016/s0038-1101(98)00211-1
Abstract
No abstract availableKeywords
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