Electron Spin Relaxation Time of Heavily P31 Doped Silicon
- 1 November 1964
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 19 (11) , 2240-2241
- https://doi.org/10.1143/jpsj.19.2240
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Spin-Lattice Relaxation of Shallow Donors In Heavily Doped SiJournal of the Physics Society Japan, 1963
- Passage Effects in Paramagnetic Resonance ExperimentsBell System Technical Journal, 1960
- Electron Spin-Lattice Relaxation in Phosphorus-Doped SiliconPhysical Review B, 1960
- Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation EffectsPhysical Review B, 1959