Photoluminescence and photoluminescence excitation spectroscopy in a magnetic field for GaAs grown on a Si substrate

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Abstract
Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy in an applied magnetic field are reported for GaAs grown directly on a Si substrate by organometallic vapor‐phase epitaxy. PLE features associated with interband Landau level transitions and excitonic transitions are identified. The magnetic field dependencies of the interband features are found to be in qualitative agreement with theoretical calculations. A narrow, Raman‐like feature (spectral width ≤0.5 meV), observed both in PL and PLE, is identified with a process in which a donor is excited from the 1s ground state to a 2p−1 final state.