Observation of the n=2 excited states of the light and heavy hole excitons in GaAs grown directly on Si by OMVPE
- 1 February 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 65 (7) , 553-556
- https://doi.org/10.1016/0038-1098(88)90336-5
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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