A Novel Ordered Nanopore Array Diode Laser
- 16 January 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 20 (4) , 240-242
- https://doi.org/10.1109/lpt.2007.912978
Abstract
In this work, we have created a new type of structure, the nanopore active layer, for achieving quantization of carrier states in a semiconductor. The nanopore structure consists of a periodic two-dimensional array of localized energy barriers perturbing an otherwise conventional quantum well. This perturbation leads to the formation of intraband forbidden energy gaps which are observed experimentally.Keywords
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