Radiative lifetimes in Si i from laser-induced fluorescence in the visible, ultraviolet, and vacuum ultraviolet

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Abstract
Radiative lifetimes for 47 levels in neutral silicon are reported. Lifetimes are measured using time-resolved laser-induced fluorescence (LIF) on a beam of silicon atoms. The transitions studied span the spectral range 160–410 nm. The experimental methods used are broadly applicable for measuring lifetimes in almost any neutral or singly ionized element using LIF in the visible, ultraviolet, and vacuum-ultraviolet spectral regions. Lifetimes are combined with previously reported branching fractions or branching ratios to generate 36 absolute transition probabilities, most with total uncertainty of 5–10 %.