Zn diffusion in doped InP: Interstitial charge state and apparent activation energy
- 1 December 1988
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (11) , 6573-6575
- https://doi.org/10.1063/1.342031
Abstract
Use of models without doping effects on the interstitial-substitutional interchange can lead to the identification of an apparently larger charge state of the interstitial and will increase the apparent activation energy of diffusion. This increase is approximately equivalent to the zinc-solubility activation energy for substrate doping near the substitutional-zinc concentration at the surface.This publication has 10 references indexed in Scilit:
- Diffusion coefficients and activation energies for Zn diffusion into undoped and S-doped InPApplied Physics Letters, 1987
- An Extra Diffusion of Zn into GaAs in Low Concentration Range : Application of the Model of Varying Charge TransferJapanese Journal of Applied Physics, 1987
- Zinc diffusion in n-type indium phosphideJournal of Applied Physics, 1987
- A Simple Model and Calculation of the Influence of Doping and Intrinsic Concentrations on the Interstitial-Substitutional Diffusion Mechanism: Application to Zn and Cd in InPJapanese Journal of Applied Physics, 1986
- Zn diffusion in InP: Effect of substrate dopant concentrationApplied Physics Letters, 1986
- Double Zinc Diffusion Fronts in InP: Correlation with Models of Varying Charge Transfer during Interstitial-Substitutional InterchangeJapanese Journal of Applied Physics, 1985
- The Temperature-Dependent Diffusion Mechanism of Zn in InP Using the Semiclosed Diffusion MethodJapanese Journal of Applied Physics, 1984
- Double zinc diffusion fronts in InP—Theory and experimentApplied Physics Letters, 1983
- An open tube method of Zn diffusion in III-V compoundsIEEE Electron Device Letters, 1982
- Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAsPhysical Review B, 1963