An Extra Diffusion of Zn into GaAs in Low Concentration Range : Application of the Model of Varying Charge Transfer
- 1 October 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (10R)
- https://doi.org/10.1143/jjap.26.1630
Abstract
A second diffusion of Zn has been observed in GaAs in the low-concentration range. The behaviour is similar to that of double diffusion in InP. The effect of zinc activity in the vapour phase has been studied using a semiclosed-box system. The observed profiles of Zn have been explained using a model of varying charge transfer by vacancy centers during interstitial-substitutional interchanges.Keywords
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