Stresses in sputtered Ti-Si multilayers and polycrystalline silicide films
- 15 May 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (10) , 4979-4982
- https://doi.org/10.1063/1.340443
Abstract
Titanium silicon multilayers have been produced by alternating sputter deposition. The stress in the as-deposited layers is a function of the period of the multilayer structure. The multilayers were subsequently annealed to form silicide films. From stress and strain measurements on these films Poisson’s ratio is determined. After annealing, the films exhibit a tensile stress which can be attributed to the difference in thermal expansion coefficient between substrate and silicide film.This publication has 4 references indexed in Scilit:
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- Stresses in TaSix films sputter deposited on polycrystalline siliconJournal of Applied Physics, 1987
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