Incorporation of argon in titanium silicon multilayer structures during sputter deposition
- 1 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (9) , 3993-3995
- https://doi.org/10.1063/1.339203
Abstract
Titanium silicon multilayer structures have been produced by alternate sputtering of silicon and titanium in an argon plasma. During the sputter process, part of the titanium and silicon layers react to form a silicide at the interfaces. Because of the argon plasma, a certain amount of argon is incorporated in the growing multilayer. A model is presented in which the amount of argon incorporated in the multilayer is a function of the nominal thickness of the individual silicon layers.This publication has 9 references indexed in Scilit:
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