Excitons formed between excited sub-bands in GaAs-Ga1-xAlxAs quantum wells
- 20 September 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (26) , L789-L794
- https://doi.org/10.1088/0022-3719/18/26/004
Abstract
The authors report the results of variational estimates of the binding energies and oscillator strengths of excitons in GaAs-Ga1-xAlxAs quantum wells.Keywords
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