Use of the modulating differentiation technique to study breakdown inhomogeneities in avalanche transit time silicon diode
- 30 April 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (4) , 381-383
- https://doi.org/10.1016/0038-1101(84)90172-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Avalanche multiplication of electron beam generated carriers in a silicon p-n junctionJournal of Physics D: Applied Physics, 1977
- Scanning Electron Microscope Studies of Premature Breakdown Sites in GaAs IMPATT TestersJournal of the Electrochemical Society, 1974
- Instrument Response Functions for Potential Modulation DifferentiationReview of Scientific Instruments, 1972
- Correlation of the Physical Location of Crystal Defects with Electrical Imperfections in GaAs p-n JunctionsJournal of Applied Physics, 1968