Avalanche multiplication of electron beam generated carriers in a silicon p-n junction
- 11 September 1977
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 10 (13) , 1781-1788
- https://doi.org/10.1088/0022-3727/10/13/014
Abstract
Carrier multiplication measurements have been made on a silicon avalanche photodiode bombarded with electrons at energies between 3.5 and 30 keV in a scanning electron microscope. The observed dependence of the multiplication characteristics on the incident electron energy is interpreted by a simple one-sided step junction model, using literature data for Si ionization rates and for the electron generation function. Evidence has been obtained that kilovolt electrons can be an alternative excitation source to light in multiplication measurements; possible applications of this injection method are discussed.Keywords
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