Kinetics and mechanisms of TiN oxidation beneath Pt thin films
- 1 November 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (9) , 4577-4585
- https://doi.org/10.1063/1.366194
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- RuO2/TiN-Based Storage Electrodes for (Ba, Sr)TiO3 Dynamic Random Access Memory CapacitorsJapanese Journal of Applied Physics, 1995
- Pt/Ti/SiO2/Si substratesJournal of Materials Research, 1995
- Cross sections for 170° backscattering of 4He from oxygen in the energy range of 2.0–9.0 MeVNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Base electrodes for high dielectric constant oxide materials in silicon technologyJournal of Materials Research, 1992
- Oxidation of titanium nitride in room air and in dry O2Journal of Applied Physics, 1991
- Barrier layers for realization of high capacitance density in SrTiO3 thin-film capacitor on siliconApplied Physics Letters, 1990
- Oxidation of metastable single-phase polycrystalline Ti0.5Al0.5N films: Kinetics and mechanismsJournal of Applied Physics, 1990
- Oxygen Diffusion and Solubility Studies in Ag and Pt Using AC Impedance SpectroscopyJournal of the Electrochemical Society, 1986
- Thermal Oxidation of Reactively Sputtered Titanium Nitride and Hafnium Nitride FilmsJournal of the Electrochemical Society, 1983
- Diffusivity and solubility of oxygen in platinum and Pt-Ni alloysMetallurgical Transactions, 1972