Selective etching and photoetching of GaAs in CrO3-HF aqueous solutions: III. Interpretation of defect-related etch figures
- 30 November 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 78 (2) , 191-217
- https://doi.org/10.1016/0022-0248(86)90055-2
Abstract
No abstract availableKeywords
This publication has 52 references indexed in Scilit:
- Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutionsJournal of Crystal Growth, 1983
- Shallow defect etching of GaAs using AB solution under laser illuminationJournal of Crystal Growth, 1981
- Arsenic precipitation at dislocations in GaAs substrate materialJournal of Applied Physics, 1980
- Observations of defects in LPE GaAs revealed by new chemical etchantJournal of Crystal Growth, 1979
- Structural Etching of {001} and {110} Faces of Various AIIIBV CompoundsCrystal Research and Technology, 1979
- A review of etching and defect characterisation of gallium arsenide substrate materialThin Solid Films, 1976
- Effects of Illumination on Preferential Etching of N‐Type GaAs in a CrO3 ‐ HF ‐ AgNO3 SolutionJournal of the Electrochemical Society, 1975
- A dislocation „etch-memory” effect in gallium arsenidePhysica Status Solidi (a), 1973
- Selective Photoetching of Gallium ArsenideJournal of the Electrochemical Society, 1972
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965