Considerations in Further Development of Aluminum Nitride as a Material for Device Applications
- 1 January 1995
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 45 references indexed in Scilit:
- Electronic structure of high pressure phase of AlNJournal of Materials Research, 1993
- MOVPE growth of cubic GaN on GaAs using dimethylhydrazineJournal of Crystal Growth, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Prospects for device implementation of wide band gap semiconductorsJournal of Materials Research, 1992
- A Comparison of the Wurtzite and Zincblende Band Structures for SiC, AlN and GaNMRS Proceedings, 1992
- An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- III-V nitrides for electronic and optoelectronic applicationsProceedings of the IEEE, 1991
- Electronic structure and bonding at SiC/AlN and SiC/BP interfacesPhysical Review B, 1991
- Perspective On Gallium NitrideMRS Proceedings, 1989
- Heavy ion bombardment of silicates and nitridesRadiation Effects, 1981