Electroluminescence from Lateral P-N Junctions Grown on (111)A GaAs Patterned Substrates

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Abstract
Lateral p-n junctions were grown on (111)A GaAs patterned substrates by a plane selective doping method and electroluminescence (EL) properties of the lateral p-n junctions were investigated. EL was observed along the line, and the line formed a triangular pattern on the substrate. The emission spectrum had a sharp peak at 870 nm at room temperature. Even though these p-n junctions were not optimized for LED structures, the emission intensity of EL was higher than that from p-n junctions of conventional structure. These characteristics are advantages of lateral p-n junctlons grown on (111)A GaAs patterned substrates. These are the first observations of EL from (111)A GaAs lateral p-n junctions.