Semiconducting Properties of InSb–InAs Alloys
- 1 June 1968
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (7) , 3385-3388
- https://doi.org/10.1063/1.1656785
Abstract
Hall coefficient and conductivity of InSb–InAs alloys have been measured from approximately 300° to 700°K. The 0°K energy gaps determined from the intrinsic carrier concentrations were found to reach a minimum of 0.195 eV at 90 mole % InSb. The electron mobilities were found to vary significantly from sample to sample and are interpreted as arising from ionized impurity plus inhomogeneity scattering.This publication has 7 references indexed in Scilit:
- High-Temperature Thermal and Electrical Properties of GaSb-InSb AlloysJournal of Applied Physics, 1967
- ELECTRON MOBILITY IN GaAs1−xPx ALLOYSApplied Physics Letters, 1965
- Thermal and Electrical Properties of Heavily Doped Ge-Si Alloys up to 1300°KJournal of Applied Physics, 1964
- CALCULATION OF ELECTRON EFFECTIVE MASS IN III-V ALLOYSCanadian Journal of Physics, 1964
- OPTICAL ENERGY-GAP VARIATION IN InAs–InSb ALLOYSCanadian Journal of Physics, 1964
- Solid Solution in AIIIBVCompoundsProceedings of the Physical Society, 1958
- Hall Effect and Conductivity of InSbPhysical Review B, 1955