Optical properties of the layer compound GaTe
- 3 December 1973
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 46 (2) , 95-96
- https://doi.org/10.1016/0375-9601(73)90042-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Modified Kramers–Kronig Analysis of Optical SpectraJournal of the Optical Society of America, 1971
- Exciton binding energies of layer‐type semiconductors GaSe and GaTePhysica Status Solidi (b), 1971
- Temperature-modulated reflectance of GaSe at the ground state exciton linePhysica Status Solidi (b), 1971
- Some Optical Properties of Layer-Type Semiconductor GaTeJournal of the Physics Society Japan, 1970
- Band Structures and Optical Properties of Semiconducting Layer Compounds GaS and GaSeJournal of the Physics Society Japan, 1968
- The crystal structures of semiconductors and a general valence ruleActa Crystallographica, 1964
- Optical absorption edge of GaTeJournal of Physics and Chemistry of Solids, 1962