Exciton binding energies of layer‐type semiconductors GaSe and GaTe
- 1 December 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 48 (2) , 729-735
- https://doi.org/10.1002/pssb.2220480231
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Temperature-modulated reflectance of GaSe at the ground state exciton linePhysica Status Solidi (b), 1971
- Some Optical Properties of Layer-Type Semiconductor GaTeJournal of the Physics Society Japan, 1970
- Experimental Evidence for the Validity of Lampert's Theory in the Negative Resistance Region of the GaSe(Sn)Physica Status Solidi (b), 1969
- Mobility of Charge Carriers in Semiconducting Layer StructuresPhysical Review B, 1967
- Electric Conductivity Studies of p‐GaTe Polycrystals and Single Crystals in Strong Electric FieldsPhysica Status Solidi (b), 1967
- Optical Reflection and Absorption of GaSxSe1−x Single CrystalsPhysica Status Solidi (b), 1966
- The optical absorption edge in layer structuresJournal of Physics and Chemistry of Solids, 1964
- Electrical resistivity and hall effect of single crystals of GaTe and GaSeJournal of Physics and Chemistry of Solids, 1962
- Photoconductivity of Gallium Selenide CrystalsPhysical Review B, 1959
- Semiconductors of the type AIIIBVIJournal of Physics and Chemistry of Solids, 1959