REACTIVELY SPUTTERED VANADIUM DIOXIDE THIN FILMS
- 1 April 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 10 (7) , 199-201
- https://doi.org/10.1063/1.1754909
Abstract
Thin films of vanadium dioxide have been formed by reactive sputtering of vanadium in an argon atmosphere doped with a partial pressure of oxygen. The films were deposited on sapphire substrates held at 400°C and exhibit a highly oriented polycrystalline monoclinic structure at room temperature. The semiconductor to metal transition is observed at 345°K with a slight hysteresis with temperature reversal.Keywords
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