Faceting evolution during self-assembling of InAs/InP quantum wires
- 3 December 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (23) , 3854-3856
- https://doi.org/10.1063/1.1424476
Abstract
The self-assembling of InAs quantum wires on (001) InP substrates during chemical beam epitaxy has been studied. The samples were characterized by reflection high-energy electron diffraction(RHEED),atomic force microscopy, and high-resolution transmission electron microscopy(HRTEM). By monitoring the RHEED chevron structures along the [11̄0] direction, we studied the facets formation during the initial states of InAs growth. The facets angles measured by HRTEM are in perfect agreement with the angles between chevron streaks. A time dependence of the chevron streaks angles is reported and correlated to the wire formation. These results can be interpreted using nonequilibrium models existing in literature.Keywords
This publication has 23 references indexed in Scilit:
- Photoluminescence properties of dense InAs/AlInAs quantum wire arraysJournal of Crystal Growth, 2000
- Self-assembled growth of InAs-quantum dots and postgrowth behavior studied by reflectance-difference spectroscopyApplied Surface Science, 2000
- Shape Transition in Growth of Strained IslandsPhysical Review Letters, 1999
- Annealing of Ge nanocrystals on Si(001) at: Metastability of huts and the stability of pyramids and domesPhysical Review B, 1998
- Growth of strained GaAs islands on (001) GaP:Journal of Crystal Growth, 1998
- Coarsening of Self-Assembled Ge Quantum Dots on Si(001)Physical Review Letters, 1998
- Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to DomesScience, 1998
- Assembling strained InAs islands by chemical beam epitaxySolid-State Electronics, 1996
- 1.3 μm photoluminescence from InGaAs quantum dots on GaAsApplied Physics Letters, 1995
- Competing relaxation mechanisms in strained layersPhysical Review Letters, 1994