Profile of the carrier lifetimes in illuminated GaAs as a function of depth
- 1 April 1978
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (4) , 2578-2580
- https://doi.org/10.1063/1.325072
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Carrier lifetime of semi-insulating GaAs in the region of magnetoconcentrationJournal of Applied Physics, 1975
- Carrier concentration ratio and Hall mobility of semi−insulating GaAs upon photoexcitation and electron bombardmentJournal of Applied Physics, 1975
- Investigation of the Recombination and Trapping Processes of Photoinjected Carriers in Semi-Insulating Cr-Doped GaAs Using PME and PC MethodsJournal of Applied Physics, 1972
- Photoconductivity of semi-insulating gallium arsenide in the presence of a magnetic fieldCanadian Journal of Physics, 1969