Photoluminescence Quenching and the Photochemical Oxidation of Porous Silicon by Molecular Oxygen
- 1 August 1997
- journal article
- research article
- Published by American Chemical Society (ACS) in Langmuir
- Vol. 13 (17) , 4652-4658
- https://doi.org/10.1021/la960535z
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- Reply to ‘‘Comment on ‘Role of interfacial oxide-related defects in the red-light emission in porous silicon’ ’’Physical Review B, 1995
- Photoluminescence peak energy evolution for porous silicon during photo-oxidation and gamma -ray oxidationJournal of Physics: Condensed Matter, 1995
- Blue emission in porous silicon: Oxygen-related photoluminescencePhysical Review B, 1994
- Role of hydrogen- and oxygen-terminated surfaces in the luminescence of porous siliconPhysical Review B, 1994
- Dynamics of the degradation by photo-oxidation of porous silicon: FTPL and FTIR absorption studyJournal of Physics: Condensed Matter, 1993
- Thermal and photochemical oxidation of Si(111): Doping effect and the reaction mechanismPhysical Review B, 1991
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Vibrational spectroscopic examination of the formation of mordenite crystalsThe Journal of Physical Chemistry, 1991
- Summary Abstract: Precursor adsorption of oxygen on Si(111) at low temperaturesJournal of Vacuum Science & Technology A, 1988