Dynamical analysis of low-energy electron diffraction intensities from Al on GaP(110): The high-coverage A1P(110) limit
- 15 July 1983
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (2) , 852-859
- https://doi.org/10.1103/physrevb.28.852
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Atomic geometry of GaSb(110): Determination via elastic low-energy electron diffraction intensity analysisPhysical Review B, 1983
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)--Sb(1 ML)Physical Review B, 1982
- The influence of electron exchange and relativistic corrections on elastic low energy electron diffraction from compound semiconductorsSurface Science, 1982
- Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayersJournal of Vacuum Science and Technology, 1981
- Dynamical analysis of low-energy-electron-diffraction intensities from GaP(110)Physical Review B, 1981
- Atomic Geometry of GaAs(110)--AlPhysical Review Letters, 1981
- Electronic structure calculations of interfaces and overlayers in the 1980’sJournal of Vacuum Science and Technology, 1979
- Dynamical calculation of low-energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructionsPhysical Review B, 1979
- A reliability factor for surface structure determinations by low-energy electron diffractionSurface Science, 1977