Depletion widths of the metal-insulator semiconductor (MIS) structure
- 1 October 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (10) , 949-954
- https://doi.org/10.1016/0038-1101(81)90116-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- MIS solar cells: A reviewIEEE Transactions on Electron Devices, 1978
- Theory of switching phenomena in metal/semi-insulator/n-p+ silicon devicesSolid-State Electronics, 1977
- Silicon p−n insulator-metal (p-n-I-M) devicesSolid-State Electronics, 1976
- A 15% efficient antireflection-coated metal-oxide-semiconductor solar cellApplied Physics Letters, 1975
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. TheorySolid-State Electronics, 1974
- Influence of illumination on MIS capacitances in the strong inversion regionIEEE Transactions on Electron Devices, 1967
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965