The growth of CdHgTe by MOCVD at reduced temperatures
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 233-239
- https://doi.org/10.1016/0022-0248(90)90722-w
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The growth of CdHgTe using the interdiffused multilayer process at reduced temperaturesMaterials Letters, 1987
- The potential for abrupt interfaces in CdxHg1−xTe using thermal and photo-MOVPEJournal of Crystal Growth, 1986
- Low-temperature metalorganic growth of CdTe and HgTe films using ditertiarybutyltellurideApplied Physics Letters, 1986
- Ultraviolet assisted growth of II–VI compoundsJournal of Vacuum Science & Technology A, 1986
- Photo-metal organic vapor phase epitaxy: A low temperature method for the growth of CdxHg1−xTeJournal of Vacuum Science & Technology B, 1985
- Photon assisted OMVPE growth of CdTeJournal of Crystal Growth, 1985
- Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltellurideApplied Physics Letters, 1985
- A new MOVPE technique for the growth of highly uniform CMTJournal of Crystal Growth, 1984
- The growth of highly uniform cadmium mercury telluride by a new MOVPE techniqueMaterials Letters, 1984
- Defect chemistry and intrinsic carrier concentration for Hg1−x Cdx Te(s) for x = 0.20, 0.40, and 1.0Journal of Electronic Materials, 1983