Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride
- 15 February 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (4) , 398-400
- https://doi.org/10.1063/1.95591
Abstract
Epitaxial films of CdTe and HgCdTe have been grown using a new metalorganic compound, diisopropyltelluride. Diisopropyltelluride is found to be less stable than the conventionally used diethyltelluride and consequently makes possible HgCdTe growth at a lower substrate temperature. Specular CdTe and HgCdTe epitaxial films have been obtained with moderate growth rates at substrate temperatures as low as 350 °C. Preliminary infrared and Hall measurements are encouraging for the application of this compound for HgCdTe growth. The reduced stability of diisopropyltelluride compared to diethyltelluride is consistent with a stability model for branched hydrocarbon molecules.Keywords
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