Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching
- 15 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 846-849
- https://doi.org/10.1016/s0022-0248(98)00307-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structureApplied Physics Letters, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hoursApplied Physics Letters, 1997
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Ridge-geometry InGaN multi-quantum-well-structure laser diodesApplied Physics Letters, 1996
- InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substratesApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Characteristics of chemically assisted ion beam etching of gallium nitrideApplied Physics Letters, 1994
- Mode reflectivity of tilted mirrors in semiconductor lasers with etched facetsApplied Optics, 1981