Pulsed ESR Studies on Doped Microcrystalline Silicon
- 1 June 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 201 (2) , R15-R16
- https://doi.org/10.1002/1521-3951(199706)201:2<r15::aid-pssb999915>3.0.co;2-3
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Time-domain measurements of the dangling bond spin-lattice relaxation in hydrogenated amorphous silicon-germanium alloysSolid State Communications, 1996
- Pulsed ESR Study of the Conduction Electron Spin Center in μc-Si:HMRS Proceedings, 1996
- Photocarrier Recombination in Microcrystalline Silicon Studied by Light Induced Electron Spin Resonance TransientsMRS Proceedings, 1996
- Free electrons and defects in microcrystalline silicon studied by electron spin resonancePhilosophical Magazine Letters, 1994
- ESR From boron in silicon at zero and small external stress I. Line positions and line structurePhysica Status Solidi (b), 1978
- Paramagnetic Resonance Absorption from Acceptors in SiliconPhysical Review Letters, 1960