Free electrons and defects in microcrystalline silicon studied by electron spin resonance
- 1 October 1994
- journal article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 70 (4) , 247-254
- https://doi.org/10.1080/09500839408240982
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Defect and structure analysis of n+-, p+- and p-type porous silicon by the electron paramagnetic resonance techniqueJournal of Luminescence, 1993
- Microcrystalline Silicon Prepared by VHF-GD: Structure, Transport and Optical PropertiesMRS Proceedings, 1992
- Electron-spin-lattice relaxation in amorphous silicon and germaniumPhysical Review B, 1983
- Current Transport in Doped Polycrystalline SiliconJapanese Journal of Applied Physics, 1980
- Doping and annealing effects on ESR in chemically vapor deposited amorphous siliconSolid State Communications, 1979
- Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped-Type Silicon. I. Metallic SamplesPhysical Review B, 1972
- Electron Spin Resonance of Conduction Electrons in Phosphorus Ion-Implanted SiliconJapanese Journal of Applied Physics, 1971
- Electron Spin Resonance Absorption in Metals. I. ExperimentalPhysical Review B, 1955
- Electron Spin Resonance Absorption in Metals. II. Theory of Electron Diffusion and the Skin EffectPhysical Review B, 1955
- Electron Spin Resonance in a Silicon SemiconductorPhysical Review B, 1953