Exciton binding energy in quantum-well wires
- 15 June 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (17) , 9345-9348
- https://doi.org/10.1103/physrevb.35.9345
Abstract
The binding energies of excitons in quantum-well wires of GaAs surrounded by As are calculated with the use of variational solutions to the effective-mass equation. The results we obtained show that the energies are dramatically dependent on the sizes of the wire, and also that their magnitudes are greater than those in comparable quasi-two-dimensional quantum-well structures.
Keywords
This publication has 13 references indexed in Scilit:
- Effective-mass eigenfunctions in superlattices and their role in well-captureSuperlattices and Microstructures, 1986
- Longitudinal polar optical modes in semiconductor quantum wellsJournal of Physics C: Solid State Physics, 1986
- Free-carrier absorption in semiconducting quantum well wiresJournal of Physics C: Solid State Physics, 1985
- Dielectric response function for a quasi-one-dimensional semiconducting systemJournal of Applied Physics, 1985
- Size effects on polar optical phonon scattering of 1-D and 2-D electron gas in synthetic semiconductorsJournal of Applied Physics, 1984
- Hydrogenic impurity states in quantum-well wiresPhysical Review B, 1984
- Direct intersubband optical absorption of semiconducting thin wireJournal of Applied Physics, 1983
- Impurity-limited mobility of semiconducting thin wireJournal of Applied Physics, 1983
- Toward quantum well wires: Fabrication and optical propertiesApplied Physics Letters, 1982
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980